Haffouz, S.: search on Z-Library

Fundraising September 15, 2024 – October 1, 2024 About fundraising

The world's largest scientific articles store. 70,000,000+ articles for free.

Fundraising September 15, 2024 – October 1, 2024

Z-Library is one of the largest online libraries in the world that contains over 17,000,000 books and 84,837,000 articles. We aim to make literature accessible to everyone. Today (September 15, 2024) we've started additional fundraising to project maintenance and development.

Also UNLIMITED downloads (for 31 days after the day of making donation) are available for ALL contributors who will donate during the fundraising period till October 1, 2024.

About fundraisingRead more

Make a donation

1

Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

Fernando González-Posada, Jennifer A. Bardwell, Simona Moisa, Soufien Haffouz, Haipeng Tang, Alejandro F. Braña, Elías Muñoz

Journal:

Applied Surface Science

Year:

2007

Language:

english

File:

PDF, 232 KB

english, 2007

2

High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer

P.R. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorczyk, P.K. Larsen

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

3

Terahertz quantum well infrared detectors

Marcel Graf, Emmanuel Dupont, Hui Luo, Soufien Haffouz, Zbig R. Wasilewski, Anthony J. Spring Thorpe, Dayan Ban, H.C. Liu

Journal:

Infrared Physics & Technology

Year:

2009

Language:

english

File:

PDF, 696 KB

english, 2009

4

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

Beaumont, B, Gibart, P, Vaille, M, Haffouz, S, Nataf, G, Bouillé, A

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 194 KB

english, 1998

5

Wet etching for improved GaN-based HBT performance

Jennifer A. Bardwell, Soufien Haffouz, Eugene M. Hsu, Haipeng Tang, Peter Chyurlia, James B. Webb

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 189 KB

english, 2005

6

GaN-Based Solar-Ultraviolet Detection Instrument

Monroy, Eva, Calle, Fernando, Angulo, Carlos, Vila, Pablo, Sanz, Angel, Garrido, Jose Antonio, Calleja, Enrique, Mũoz, Elias, Haffouz, Soufien, Beaumont, Bernard

Journal:

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

7

Near-Infrared Ultrawide Bandwidth LEDs Using InAs Quantum Dots of Equally Tuned Heights

Haffouz, Sofiane, Barrios, Pedro J., Poitras, Daniel, Normandin, Richard

Journal:

IEEE Photonics Technology Letters

Year:

2012

Language:

english

File:

PDF, 588 KB

english, 2012

8

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

Haffouz, S., Lahrèche, H., Vennéguès, P., de Mierry, P., Beaumont, B., Omnès, F., Gibart, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.00 MB

english, 1998

9

Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide

Haffouz, Sofiane, Zeuner, Katharina D., Dalacu, Dan, Poole, Philip J., Lapointe, Jean, Poitras, Daniel, Mnaymneh, Khaled, Wu, Xiaohua, Couillard, Martin, Korkusinski, Marek, Schöll, Eva, Jöns, Klaus D

Journal:

Year:

2018

Language:

english

File:

PDF, 652 KB

english, 2018

10

The GaN Growth by a Hot Filament Metalorganic Vapor Phase Deposition Technique

T. Boufaden, A. Rebey, I. Halidou, Z. Chine, S. Haffouz, B. El Jani

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 142 KB

english, 1999

11

Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers

S. Haffouz, B. Beaumont, P. Vennéguès, P. Gibart

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 247 KB

english, 1999

12

Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment

P.R. Hageman, S. Haffouz, V. Kirilyuk, L. Macht, J.L. Weyher, A. Grzegorczyk, P.K. Larsen

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 113 KB

english, 2001

13

Near-Room-Temperature Mid-Infrared Quantum Well Photodetector

Sean Hinds, Margaret Buchanan, Richard Dudek, Sofiane Haffouz, Sylvain Laframboise, Zbigniew Wasilewski, H. C. Liu

Journal:

Advanced Materials

Year:

2011

Language:

english

File:

PDF, 1.37 MB

english, 2011

14

GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE

H. Tang, J.A. Bardwell, J. Lapointe, S. Raymond, J. Fraser, S. Haffouz, S. Rolfe

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 500 KB

english, 2007

15

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

S. Haffouz, S. Raymond, Z.G. Lu, P.J. Barrios, D. Roy-Guay, X. Wu, J.R. Liu, D. Poitras, Z.R. Wasilewski

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 381 KB

english, 2009

16

Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 437 KB

english, 2009

17

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

S. Haffouz, H. Tang, J.A. Bardwell, E.M. Hsu, J.B. Webb, S. Rolfe

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 308 KB

english, 2005

18

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

S. Haffouz, A. Grzegorczyk, P.R. Hageman, P. Vennégu≐s, E.W.J.M. van der Drift, P.K. Larsen

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 441 KB

english, 2003

19

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

P Vennéguès, B Beaumont, S Haffouz, M Vaille, P Gibart

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 1001 KB

english, 1998

20

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

G Nataf, B Beaumont, A Bouillé, S Haffouz, M Vaille, P Gibart

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 308 KB

english, 1998

21

Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate

S Haffouz, P.R Hageman, V Kirilyuk, L Macht, J.L Weyher, P.K Larsen

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

22

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M Leroux, B Beaumont, N Grandjean, P Lorenzini, S Haffouz, P Vennéguès, J Massies, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 274 KB

english, 1997

23

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy

B Beaumont, S Haffouz, P Gibart, M Leroux, Ph Lorenzini, E Calleja, E Muñoz

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 190 KB

english, 1997

24

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

G. Nataf, B. Beaumont, A. Bouillé, P. Vennéguès, S. Haffouz, M. Vaille, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.79 MB

english, 1999

25

Low pressure MOVPE grown AlGaN for UV photodetector applications

F. Omnes, N. Marenco, S. Haffouz, H. Lahreche, P. de Mierry, B. Beaumont, P. Hageman, E. Monroy, F. Calle, E. Muñoz

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 198 KB

english, 1999

26

Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation.

P de Mierry, H Lahreche, S Haffouz, P Vennéguès, B Beaumont, F Omnès, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 892 KB

english, 1999

27

Thermally stimulated current spectroscopy and photoluminescence of carbon-doped semi-insulating GaN grown by ammonia-based molecular beam epitaxy

Z.-Q. Fang, D.C. Look, B. Claflin, S. Haffouz, H. Tang, J. Webb

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 199 KB

english, 2005

28

Monitoring the self-heating in a high frequency GaN HFET

S.P. McAlister, J.A. Bardwell, S. Haffouz, H. Tang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 143 KB

english, 2006

29

Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Haffouz, S., Rodermans, M., Barrios, P.J., Lapointe, J., Raymond, S., Lu, Z., Poitras, D.

Journal:

Electronics Letters

Year:

2010

Language:

english

File:

PDF, 220 KB

english, 2010

30

Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

Beaumont, B., Haffouz, S., Gibart, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 449 KB

english, 1998

31

Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

Haffouz, S., Kirilyuk, V., Hageman, P. R., Macht, L., Weyher, J. L., Larsen, P. K.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 413 KB

english, 2001

32

Uniformity of AlGaN∕GaN HEMTs Grown by Ammonia-MBE on 2-in. Sapphire Substrate

Hsu, E. M., Bardwell, J. A., Haffouz, S., Tang, H., Storey, C., Chyurlia, P.

Journal:

Journal of The Electrochemical Society

Year:

2005

Language:

english

File:

PDF, 96 KB

english, 2005

33

Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

Tang, H., Haffouz, S., Bardwell, J. A.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 510 KB

english, 2006

34

Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

Haffouz, S., Tang, H., Rolfe, S., Bardwell, J. A.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 432 KB

english, 2006

35

Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs

Bardwell, J. A., Haffouz, S., Tang, H., Wang, R.

Journal:

Journal of The Electrochemical Society

Year:

2006

Language:

english

File:

PDF, 399 KB

english, 2006

36

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

McAlister, S. P., Bardwell, J. A., Haffouz, S., Tang, H.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2006

Language:

english

File:

PDF, 393 KB

english, 2006

37

The Effect of Surface Cleaning on Current Collapse in AlGaN∕GaN HEMTs

Bardwell, J. A., Haffouz, S., McKinnon, W. R., Storey, C., Tang, H., Sproule, G. I., Roth, D., Wang, R.

Journal:

Electrochemical and Solid-State Letters

Year:

2007

Language:

english

File:

PDF, 277 KB

english, 2007

38

Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

Macht, L., Hageman, P. R., Haffouz, S., Larsen, P. K.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 580 KB

english, 2005

39

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Monitoring the Self-Heating in a High Frequency GaN HFET

McAlister, S.P., Bardwell, J.A., Haffouz, S., Tang, H.

Year:

2005

Language:

english

File:

PDF, 222 KB

english, 2005

40

Characterization and modeling of AlGaN∕GaN heterostructure field effect transistors for low noise amplifiers

S. H. Knox, J. W. M. Rogers, P. N. A. Chyurlia, N. G. Tarr, J. A. Bardwell, H. Tang, S. Haffouz

Year:

2006

Language:

english

File:

PDF, 320 KB

english, 2006

41

Single photoelectron detection after selective excitation of electron heavy-hole and electron light-hole pairs in double quantum dots

Morimoto, K., Fujita, T., Allison, G., Teraoka, S., Larsson, M., Kiyama, H., Haffouz, S., Austing, D. G., Ludwig, A., Wieck, A. D., Oiwa, A., Tarucha, S.

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 861 KB

english, 2014

42

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10-1m} faceted surface GaN template

Haffouz, S., Tang, H., Bardwell, J. A., Lefebvre, P., Bretagnon, T., Riemann, T., Christen, J.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 556 KB

english, 2006

43

Effect of template morphology on the efficiency of InGaN∕GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

Tang, H., Haffouz, S., Powell, A., Bardwell, J. A., Webb, J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 414 KB

english, 2005

44

[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - AlGaN/GaN HEMTs Fabricated on Selectively Grown Mesas on Si(111)

Bardwell, J., Haffouz, Soufien, Tang, Haipeng, Kochtane, Amine, Lester, Tim, Wang, Rongzhu, Rolfe, Stephen

Year:

2007

Language:

english

File:

PDF, 541 KB

english, 2007

45

Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE

Beaumont, B., Calle, F., Haffouz, S., Monroy, E., Leroux, Mathieu, Calleja, Enrique, Lorenzini, P., Muñoz Merino, Elias, Gibart, Pierre

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 344 KB

1998

46

Comparative Study Of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations

Vennegues, P., Haffouz, S., Bouille, A., Leroux, M., Beaumont, B.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 1.70 MB

english, 1998

47

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs

Bardwell, J., Haffouz, Soufien, McKinnon, Ross, Storey, Craig, Tang, Haipeng, Sproule, G. Irwin, Roth, Daniel, Wang, Rongzhu

Year:

2006

Language:

english

File:

PDF, 461 KB

english, 2006

48

AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

Bardwell, J.A., Haffouz, S., Kochtane, A., Lester, T., Storey, C., Tang, H.

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 111 KB

english, 2007

49

factor in GaAs quantum dots and quantum wells of different well widths

Allison, G., Fujita, T., Morimoto, K., Teraoka, S., Larsson, M., Kiyama, H., Oiwa, A., Haffouz, S., Austing, D. G., Ludwig, A., Wieck, A. D., Tarucha, S.

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 3.31 MB

english, 2014

50

Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors

S. Haffouz, H. Tang, J. A. Bardwell, S. Rolfe, E. M. Hsu, I. Sproule, S. Moisa, M. Beaulieu, J. B. Webb

Year:

2005

Language:

english

File:

PDF, 596 KB

english, 2005